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New Multiferroic Material Could Do Wonders for Next-Gen Gadgets

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20th of October 2009, 05:56 GMT | By Alex Vochin


Multiferroic material to prove its worth in future applications
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The evolution of modern technology is influenced by a very large number of factors, one of the most important being the scientific breakthroughs in the field of materials' sciences in general and semiconductors in particular, which play a very important part in pretty much any electronic product out there.

And this is exactly the subject we're going to tackle as follows, namely that of a new type of multiferroic material that has been discovered by scientists at Argonne National Laboratory. This material has both ferromagnetic and ferroelectric polarization, which are seemingly contradictory properties.

Argonne scientist Craig Fennie's principles of microscopic materials design predicted that the high pressure form of FeTiO3 would have both weak ferromagnetism and ferroelectric polarization, an unusual combination in a single material.

"We were able to take the theory and, through targeted synthesis and measurement, prove that FeTiO3 has both weak ferromagnetism and ferroelectricity, just as Craig predicted," Argonne scientist John Mitchell said. "Success in this materials design and discovery project would not have been possible without a collaborative team involving several disciplines and talents from across the lab and indeed the country.”

Scientists from Argonne's materials science division and Center for Nanoscale Materials along with scientists from Pennsylvania State University, University of Chicago and Cornell University used piezoresponse force microscopy, optical second harmonic generation and magnetometry to show ferroelectricity at and below room temperature and weak ferromagnetism below 120 Kelvin for polycrystalline FeTiO3 synthesized at high pressure.

And if you're wondering just what this new multiferroic material will be able to do for the gadgets of the future, here's the answer. So, according to the scientists from the Argonne National Laboratory, these magnetic ferroelectrics may have applications in memory, sensors, actuators and other multifunctional devices by acting as magnetic switches when their electric fields are reversed.

Of course, it remains to be seen just how soon this wonder-material will affect future electronic devices and manage to find their way into real-life products, but we're keeping our fingers crossed.


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industry news | semiconductors | new materials | multiferroic materials
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