Although portable storage solutions such as Flash drives and memory cards have reached capacities that some years ago were only reserved for top of the line hard drives, there never seems to be enough storage space available, so Samsung went ahead and developed a new technology that enables manufacturers to build even larger USB flash drives or SD cards.

This new advancement in storage was made possible by the 20 nanometer process technology that enables the production of higher density NAND flash cells, able to store up to 8GB inside a single chip, effectively doubling the storage capacity of previous generation devices.

But increased storage capacities isn't all these chips bring to market since Samsung also improved their performance by applying Toggle DDR 1.0 specifications, enabling data transfers on both the rising and the falling edge of the signal clock, the same concept used by the DDR RAM memory inside your computer.

“Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32Gb 3-bit NAND flash last November,” said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics.

“By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND.”

Samsung has already started producing these chips so it shouldn't take storage manufacturers that long to provide us with even faster and roomier SD cards and flash drives.